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 INTEGRATED CIRCUITS
DATA SHEET
TDA8561Q 2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
Product specification Supersedes data of 1997 Sep 22 File under Integrated Circuits, IC01 1999 Jun 30
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
FEATURES * Requires very few external components * High output power * Flexibility in use; Quad single-ended or stereo BTL * Low output offset voltage * Fixed gain * Diagnostic facility (distortion, short-circuit and temperature detection) * Good ripple rejection * Mode select switch (operating, mute and standby) * Load dump protection * AC and DC short-circuit safe to ground and to VP * Low power dissipation in any short-circuit condition * Thermally protected QUICK REFERENCE DATA SYMBOL VP IORM IP Isb Po RR Vno ZI VO| Po PARAMETER positive operating supply voltage repetitive peak output current total quiescent current standby current RL = 4 ; THD = 10% Rs = 0 CONDITIONS 6 - - - - 46 - 25 - MIN. - 80 0.1 TYP. 14.4 * Reverse polarity safe * Electrostatic discharge protection * No switch-on/switch-off plop * Flexible leads * Low thermal resistance
TDA8561Q
* Identical inputs (inverting and non-inverting). GENERAL DESCRIPTION The TDA8561Q is an integrated class-B output amplifier in a 17-lead single-in-line (SIL) power package. It contains 4 x 12 W Single-Ended (SE) or 2 x 24 W Bridge-Tied Load (BTL) amplifiers. The device is primarily developed for car radio applications.
MAX. 18 4 - 100 - - - - 150 V A
UNIT
mA A
Stereo BTL application output power supply voltage ripple rejection noise output voltage input impedance DC output offset voltage 24 - 70 - - W dB V k mV
Quad single-ended application output power THD = 10% RL = 4 RL = 2 RR Vno ZI supply voltage ripple rejection noise output voltage input impedance Rs = 0 - - 46 - 50 7 12 - 50 - - - - - - W W dB V k
ORDERING INFORMATION TYPE NUMBER TDA8561Q PACKAGE NAME DESCRIPTION VERSION SOT243-1
DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
1999 Jun 30
2
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
BLOCK DIAGRAM
TDA8561Q
V P1 5 non-inverting input 1 1 60 k VA 2 k 18 k mute switch 60 k 3 VA 2 k 18 k VP power stage power stage mute switch Cm
VP2 13
TDA8561Q
6 output 1
Cm
inverting input 2
8
output 2
14 stand-by switch VA 15 k x1 supply voltage ripple rejection 4 15 k mute reference voltage Cm mute switch 60 k VA 2 k 18 k mute switch 60 k VA 2 k 18 k power stage 10 power stage 12 PROTECTIONS thermal short-circuit stand-by reference voltage mute switch 16
mode select switch
diagnostic output
non-inverting input 4
17
output 4
Cm
inverting input 3
15
output 3
2
input reference voltage
9
7 GND1
11 GND2 power ground (substrate)
MEA858 - 1
ground (signal)
not connected
Fig.1 Block diagram.
1999 Jun 30
3
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
PINNING SYMBOL -INV 1 GND(S) INV 2 RR VP1 OUT 1 GND1 OUT 2 n.c. OUT 3 GND2 OUT 4 VP2 MODE INV 3 VDIAG -INV 4 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 DESCRIPTION non-inverting input 1 signal ground inverting input 2 supply voltage ripple rejection supply voltage output 1 power ground 1 output 2 not connected output 3 power ground 2 output 4 supply voltage mode select switch input inverting input 3 diagnostic output non-inverting input 4
V P1 OUT 1 GND1 OUT 2 n.c. 5 6 7 8 9 TDA8561Q INV 1 GND(S) INV 2 RR 1 2 3 4
TDA8561Q
OUT 3 10 GND2 11 OUT 4 12 V P2 13 MODE 14 INV 3 15 V DIAG 16 INV 4 17
MEA859 - 1
Fig.2 Pin configuration.
1999 Jun 30
4
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
FUNCTIONAL DESCRIPTION The TDA8561Q contains four identical amplifiers and can be used for Single-Ended (SE) or Bridge-Tied Load (BTL) applications. The gain of each amplifier is fixed at 20 dB (26 dB in BTL). Special features of the device are: Mode select switch (pin 14) * Low standby current (<100 A) * Low switching current (low cost supply switch) * Mute facility. To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during 100 ms (charging of the input capacitors at pins 1, 3, 15 and 17). This can be achieved by: * Microcontroller control * External timing circuit (see Fig.11). Diagnostic output (pin 16) DYNAMIC DISTORTION DETECTOR (DDD) At the onset of clipping of one or more output stages, the dynamic distortion detector becomes active and pin 16 goes LOW. This information can be used to drive a sound processor or DC volume control to attenuate the input signal and thus limit the distortion. The output level of pin 16 is independent of the number of channels that are clipping (see Figs 3 and 4). SHORT-CIRCUIT PROTECTION When a short-circuit occurs at one or more outputs to ground or to the supply voltage, the output stages are switched off until the short-circuit is removed and the device is switched on again, with a delay of approximately 20 ms, after removal of the short-circuit. During this short-circuit condition, pin 16 is continuously LOW. When a short-circuit across the load of one or both channels occurs the output stages are switched off for approximately 20 ms. After that time it is checked during approximately 50 s to see whether the short-circuit is still present. Due to this duty cycle of 50 s/20 ms the average current consumption during this short-circuit condition is very low (approximately 40 mA). Fig.3
handbook, halfpage VO
TDA8561Q
During this short-circuit condition, pin 16 is LOW for 20 ms and HIGH for 50 s (see Fig.5). The power dissipation in any short-circuit condition is very low.
MGA705
0
V16 VP 0 t
Distortion detector waveform; BTL application.
handbook, halfpage VO
MGA706
0
V16 VP 0 t
Fig.4
Distortion detector waveform; single-ended application.
1999 Jun 30
5
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
TDA8561Q
handbook, full pagewidthcurrent
in output stage
MGL214
V16 VP
short-circuit over the load 20 ms
t
t 50 s
Fig.5 Short-circuit waveform.
TEMPERATURE DETECTION When the virtual junction temperature Tvj reaches 150 C, pin 16 will be active LOW. OPEN-COLLECTOR OUTPUT Pin 16 is an open-collector output, which allows pin 16 of more devices being tied together. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL vP operating non-operating load dump protection IOSM IORM Tstg Tamb Tvj Vpsc Vpr Ptot non-repetitive peak output current repetitive peak output current storage temperature operating ambient temperature virtual junction temperature AC and DC short-circuit safe voltage reverse polarity total power dissipation during 50 ms; tr 2.5 ms PARAMETER positive supply voltage - - - - - -55 -40 - - - - 18 30 45 6 4 +150 +85 150 18 6 60 V V V A A C C C V V W CONDITIONS MIN. MAX. UNIT
1999 Jun 30
6
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
THERMAL CHARACTERISTICS In accordance with IEC 747-1. SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient in free air thermal resistance from junction to case (see Figs 6 and 7) VALUE 40 1.3
TDA8561Q
UNIT K/W K/W
handbook, halfpage
virtual junction output 2 output 3 output 4
output 1
handbook, halfpage
output 1
output 2 3.0 K/W 3.0 K/W 3.0 K/W 3.0 K/W
virtual junction
2.2 K/W
2.2 K/W
0.7 K/W 0.2 K/W
MEA861 - 1
0.7 K/W
MEA860 - 2
case
0.2 K/W
case
Fig.6
Equivalent thermal resistance network; BTL application.
Fig.7
Equivalent thermal resistance network; single-ended application.
1999 Jun 30
7
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 C; measured in Fig.8; unless otherwise specified. SYMBOL Supply VP IP VO VO Von MUTE CONDITION Vmute VO VO mute voltage output voltage in mute position DC output offset voltage (between pins 6 to 8 and 10 to 12) VImax = 1 V; f = 1 kHz 3.3 - - - - - positive supply voltage total quiescent current DC output voltage DC output offset voltage note 2 note 1 6 - - - 14.4 80 6.9 - - PARAMETER CONDITIONS MIN. TYP.
TDA8561Q
MAX.
UNIT
18 160 - 150 - 6.4 2 150
V mA V mV
Mode select switch switch-on voltage level 8.5 V
V mV mV
STANDBY CONDITION Vsb Isb Isw VDIAG Notes 1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V. 2. At 18 V < VP < 30 V the DC output voltage 0.5VP. standby voltage standby current switch-on current 0 - - any short-circuit or clipping - - - 12 - 2 100 40 V A A
Diagnostic output (pin 16) diagnostic output voltage 0.6 V
1999 Jun 30
8
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
AC CHARACTERISTICS VP = 14.4 V; RL = 4 ; f = 1 kHz; Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP.
TDA8561Q
MAX.
UNIT
Stereo BTL application (measured in Fig.8) Po output power note 1 THD = 0.5% THD = 10% THD Po total harmonic distortion output power Po = 1 W VP = 13.2 V THD = 0.5% THD = 10% B fl fh Gv SVRR power bandwidth low frequency roll-off high frequency roll-off closed loop voltage gain supply voltage ripple rejection on mute standby ZI Vno input impedance noise output voltage on on mute cs Gv THD channel separation channel unbalance V16 0.6 V; no short-circuit note 1 THD = 0.5% THD = 10% THD PO total harmonic distortion output power Po = 1 W RL = 2 ; note 1 THD = 0.5% THD = 10% fl fh Gv low frequency roll-off high frequency roll-off closed loop voltage gain at -1 dB; note 2 at -1 dB 7.5 10 - 20 19 10 12 25 - 20 - - - - 21 W W Hz kHz dB 4 5.5 - 5 7 0.06 - - - W W % Rs = 0 ; note 4 Rs = 10 k; note 4 notes 4 and 5 Rs = 10 k - - - 40 - - 70 100 60 60 - 10 - 200 - - 1 - V V V dB dB note 3 48 46 80 25 - - - 30 - - - 38 dB dB dB k THD = 0.5%; Po = -1 dB; with respect to 15 W at -1 dB; note 2 at -1 dB - 20 25 - - - 16 20 20 to 15000 45 - 26 - - 27 Hz kHz dB - - - W W Hz 15 20 - 19 24 0.06 - - - W W %
DYNAMIC DISTORTION DETECTOR total harmonic distortion %
Quad single-ended application (measured in Fig.9) Po output power
1999 Jun 30
9
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
SYMBOL SVRR on mute standby ZI Vno input impedance noise output voltage on on mute cs Gv THD Notes 1. Output power is measured directly at the output pins of the IC. 2. Frequency response externally fixed. channel separation channel unbalance V16 0.6 V; no short-circuit Rs = 0 ; note 4 Rs = 10 k; note 4 notes 4 and 5 Rs = 10 k - - - 40 - - 50 70 50 60 - 10 PARAMETER supply voltage ripple rejection note 3 48 46 80 50 - - - 60 CONDITIONS MIN. TYP.
TDA8561Q
MAX. - - - 75 - 100 - - 1 -
UNIT dB dB dB k V V V dB dB
DYNAMIC DISTORTION DETECTOR total harmonic distortion %
3. Ripple rejection measured at the output with a source impedance of 0 , maximum ripple amplitude of 2 V (p-p) and at a frequency of between 100 Hz and 10 kHz. 4. Noise measured in a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage independent of Rs (Vi = 0 V).
1999 Jun 30
10
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
TEST AND APPLICATION INFORMATION
TDA8561Q
handbook, full pagewidth
mode switch diagnostic
VP 10 k 16 5 13 100 nF 2200 F
14 220 nF
non- inverting input 1
1
TDA8561Q TDA8564Q
6
60 k 8 inverting input 2 ground (signal) 3 2 60 k
reference voltage 9 60 k
not connected
supply voltage ripple rejection 220 nF
4
non-inverting input 4
17 12
60 k 10 inverting input 3 15
7
11
MEA862 - 2
power ground (substrate)
Fig.8 Stereo BTL application diagram.
1999 Jun 30
11
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
TDA8561Q
handbook, full pagewidth
mode switch
VP 10 k 16 5 13 100 nF 2200 F
14 220 nF
non- inverting input 1
1
TDA8561Q TDA8564Q
6 1000 F 60 k
inverting input 2
220 nF
8 3 2 60 k 1000 F
ground (signal)
4 supply voltage ripple rejection non-inverting input 4 220 nF 60 k 220 nF 100 1/2Vp F 17 60 k
reference voltage 9
not connected
12 1000 F
10 15 1000 F
inverting input 3
7
11
MEA863 - 2
power ground (substrate)
Fig.9 Quad single-ended application diagram 1.
1999 Jun 30
12
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
TDA8561Q
handbook, full pagewidth
mode switch
VP 10 k 16 5 13 100 nF 2200 F
14 220 nF
non- inverting input 1
1
TDA8561Q TDA8564Q
6
60 k inverting input 2 220 nF 8 3 2 60 k
ground (signal)
not connected
9 60 k
reference voltage 4
VP 2 100 F 12 D1
non-inverting input 4 220 nF
17
60 k 220 nF 10 15
inverting input 3
7
11
MEA864 - 2
2200 F
power ground (substrate)
(1) When short-circuiting the single-ended capacitor, the dissipation will be reduced due to diode D1.
Fig.10 Quad single-ended application diagram 2.
1999 Jun 30
13
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
Mode select switch To avoid switch-on plops, it is advised to keep the amplifier in the mute mode during >100 ms (charging of the input capacitors at pins 1, 3, 15 and 17. The circuit in Fig.11 slowly ramps up the voltage at the mode select switch pin when switching on and results in fast muting when switching off.
VP
TDA8561Q
handbook, halfpage
10 k
100
47 F
mode select switch 100 k
MGA708
Fig.11 Mode select switch circuitry.
10 2 THD (%) 10
MGA709
1 (1)
10 1
(2) (3)
10 2 10 2 (1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz.
10 1
1
10
P o (W)
10 2
Fig.12 Total harmonic distortion as a function of output power; VP = 14.4 V, RL = 4 .
1999 Jun 30
14
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
TDA8561Q
handbook, full pagewidth
50
MGA710
Po (W) 40
(1) 30 (2) 20
(3)
10
0 8 (1) THD = 30%. (2) THD = 10%. (3) THD = 0.5%. 10 12 14 16 VP (V) 18
Fig.13 Output power as a function of supply voltage.
MGA711
20 Po (W) 18
16
14
12
10 10
10 2
10 3
10 4
f (Hz)
10 5
Fig.14 Power bandwidth as a function of frequency; THD = 0.5%, VP = 14.4 V, RL = 4 .
1999 Jun 30
15
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
TDA8561Q
1
MGA712
THD (%)
(1) 10 1 (2)
(3)
10 2 10 (1) Po = 0.1 W. (2) Po = 1 W. (3) Po = 10 W.
10 2
10 3
10 4
f (Hz)
10 5
Fig.15 Total harmonic distortion as a function of frequency; VP = 14.4 V, RL = 4 .
50 RR (dB) (1) 60 (2)
MGA713
70
80
90
(3)
100 10 (1) On condition. (2) Mute condition. (3) Standby condition.
10 2
10 3
10 4
f (Hz)
10 5
Fig.16 Ripple rejection as a function of frequency.
1999 Jun 30
16
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
TDA8561Q
handbook, full pagewidth
100
MGA714
Iq (mA) 92
84
76
68
60 8 10 12 14 16 VP (V) 18
Fig.17 Quiescent current as a function of supply voltage; RL = .
SINGLE-ENDED APPLICATION
10 2 THD (%) 10
MGA715
1
(1)
(2) 10 1 (3)
10 2 10 2 (1) f = 10 kHz.
10 1 (2) f = 1 kHz.
1 (3) f = 100 Hz.
10
P o (W)
10 2
Fig.18 Total harmonic distortion as a function of output power; VP = 14.4 V, RL = 2 .
1999 Jun 30
17
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
TDA8561Q
handbook, full pagewidth
15
MGA716
Po (W) 12
9
(1)
(2) 6 (3)
3
0 8 (1) THD = 30%. (2) THD = 10%. (3) THD = 0.5%. 10 12 14 16 VP (V) 18
Fig.19 Output power as a function of supply voltage.
MGA717
10 Po (W) 8
6
4
2
0 10
10 2
10 3
10 4
f (Hz)
10 5
Fig.20 Power bandwidth as a function of frequency; THD = 0.5%, VP = 14.4 V, RL = 2 .
1999 Jun 30
18
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
TDA8561Q
1
MGA718
THD (%)
(1) 10
1
(2)
10 2 10 (1) Po = 0.1 W. (2) Po = 1 W.
10 2
10 3
10 4
f (Hz)
10 5
Fig.21 Total harmonic distortion as a function of frequency; VP = 14.4 V, RL = 2 .
handbook, full pagewidth
30
MGA719
cs (dB)
40
50
60
70
80 10
10 2
10 3
10 4
f (Hz)
10 5
Fig.22 Channel separation as a function of frequency.
1999 Jun 30
19
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
BTL APPLICATION
TDA8561Q
14 P tot (W) 12
MGA720
10
8
6
4
2 0 4 8 12 16 20 24 Po (W) 28
Fig.23 Total power dissipation as a function of output power; VP = 14.4 V, RL = 4 (1 channel driven BTL or 4 channels in single-ended mode).
1999 Jun 30
20
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
TDA8561Q
SOT243-1
non-concave D x Dh
Eh
view B: mounting base side
d
A2
B j E A
L3
L
Q c vM
1 Z e e1 bp wM
17 m e2
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT243-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A 17.0 15.5 A2 4.6 4.2 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 2.54 e1 e2 Eh 6 j 3.4 3.1 L 12.4 11.0 L3 2.4 1.6 m 4.3 Q 2.1 1.8 v 0.8 w 0.4 x 0.03 Z (1) 2.00 1.45
1.27 5.08
ISSUE DATE 95-03-11 97-12-16
1999 Jun 30
21
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
SOLDERING Introduction to soldering through-hole mount packages This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. Soldering by dipping or by solder wave The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds.
TDA8561Q
The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Manual soldering Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING DBS, DIP, HDIP, SDIP, SIL Note 1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. suitable suitable(1) WAVE
1999 Jun 30
22
Philips Semiconductors
Product specification
2 x 24 W BTL or 4 x 12 W single-ended car radio power amplifier
NOTES
TDA8561Q
1999 Jun 30
23
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 66
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545002/04/pp24
Date of release: 1999 Jun 30
Document order number:
9397 750 06053


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